Integrated semiconduct memory with test circuit
US7266027B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2005 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Feb 1, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/1202
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated semiconductor memory includes word lines connected to a first voltage potential via a respective first controllable switch and a respective third controllable switch and to a second voltage potential via a respective second controllable switch. In order to test whether one of the word lines is connected to the first voltage potential via its respective first and third controllable switches, the one of the word lines is connected to a comparator circuit via the respective second controllable switch and a driver line. After the respective first and third controllable switches have been controlled into the on state, in a test operating state of the integrated semiconductor memory, the respective second controllable switch is controlled into the on state and a potential state on the word line is evaluated by the comparator circuit. The result of the evaluation is fed to an external data terminal by an evaluation signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.