Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces
US7267784B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2006 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Jun 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and (d) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the metal and/or insulating material removed during the polishing process. The complexing or coupling agent carries away the removed metal and/or silicon dioxide insulator particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a surface comprising contacting the surface with the compositions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.