Post-polish treatment for inhibiting copper corrosion
US7268073B2 · kind B2 · utility
5Cited by
10References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2004 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Nov 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods (102) are presented for protecting copper structures (26) from corrosion in the fabrication of semiconductor devices (2), wherein a thin semiconductor or copper-semiconductor alloy corrosion protection layer (30) is formed on an exposed surface (26a) of a copper structure (26) prior to performance of metrology operations (206), so as to inhibit corrosion of the copper structure (26). All or a portion of the corrosion protection layer (30) is then removed (214) in forming an opening in an overlying dielectric (44) in a subsequent interconnect layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.