Method and system for chemical mechanical polishing pad cleaning
US7270597B2 · kind B2 · utility
3Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2005 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Oct 21, 2025 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/042
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
In one embodiment, a method for cleaning a chemical mechanical polishing (CMP) pad is provided. The CMP pad surface has a residue thereon. Chemicals are applied onto the surface of the CMP pad and the pad surface is rinsed so as to substantially remove by-product produced by the chemicals. A mechanical conditioning operation is performed on the surface of the pad. The wafer surface includes copper and oxide during the CMP operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.