Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry
US7271112B1 · kind B1 · utility
13Cited by
32References
17Claims
0Family size
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Key dates
| Filing date | Dec 30, 2004 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Dec 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming conformal films with increased density are described. The methods may be used to improve gap fill in semiconductor device manufacturing by eliminating seams and voids. The methods involve operating at high reactant partial pressure. Additionally, film properties may be further enhanced by optimizing the temperature of the substrate during exposure to the metal-containing and/or silicon-containing precursor gases commonly used in conformal film deposition techniques such as ALD and PDL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.