Modified source/drain re-oxidation method and system
US7271435B2 · kind B2 · utility
0Cited by
22References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2002 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Dec 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self-aligned source resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.