Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base
US7271463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2004 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Jul 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, a liner layer preferably is deposited into the trench. An anisotropic plasma process is then performed on the trench. A silicon layer may be deposited on the base of the trench during the plasma process, or the plasma can treat the liner layer. The trench is then filled with a spin-on precursor. A densification or reaction process is then applied to convert the spin-on material into an insulator, and oxidizing the silicon rich layer on the base of the trench. The resulting trench has a consistent etch rate from top to bottom of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.