Trench transistor

US7274077B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Henninger · Birkenfeld, DE
• Franz Hirler · Isen, DE

Key dates

• Filing date: Feb 25, 2005
• Grant date: Sep 25, 2007
• Expiry date: Aug 10, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A trench transistor has a cell array, in which at least one cell array trench (2) is provided, and an edge structure framing the cell array. An edge trench (15) spaced apart from the cell array trenches (2) is provided in the edge structure.