Optical metrology of a structure formed on a semiconductor wafer using optical pulses
US7274465B2 · kind B2 · utility
1Cited by
8References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2005 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Mar 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A structure formed on a wafer can be examined by directing an incident pulse at the structure, the incident pulse being a sub-picosecond optical pulse. A diffraction pulse resulting from the incident pulse diffracting from the structure is measured. A characteristic of the profile of the structure is then determined based on the measured diffraction pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.