Patent · US Expired

Method of fabrication of a die oxide ring

US7276440B2 · kind B2 · utility

2Cited by
7References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 12, 2003
Grant dateOct 2, 2007
Priority date
Expiry dateOct 28, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/09701
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In accordance with the objectives of the invention a new design and method for the implementation thereof is provided in the form of an “oxide ring”. A conventional die is provided with a guard ring or sealing ring, which surrounds and isolates the active surface area of an individual semiconductor die. The “oxide ring” of the invention surrounds the guard ring or sealing ring and forms in this manner a mechanical stress release buffer between the sawing paths of the die and the active surface area of the singulated individual semiconductor die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.