Method for making a semiconductor device with strain enhancement
US7282415B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2005 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | Sep 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
A semiconductor device with strain enhancement is formed by providing a semiconductor substrate and an overlying control electrode having a sidewall. An insulating layer is formed adjacent the sidewall of the control electrode. The semiconductor substrate and the control electrode are implanted to form first and second doped current electrode regions, a portion of each of the first and second doped current electrode regions being driven to underlie both the insulating layer and the control electrode in a channel region of the semiconductor device. The first and second doped current electrode regions are removed from the semiconductor substrate except for underneath the control electrode and the insulating layer to respectively form first and second trenches. An insitu doped material containing a different lattice constant relative to the semiconductor substrate is formed within the first and second trenches to function as first and second current electrodes of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.