Process for transfer of a thin layer formed in a substrate with vacancy clusters
US7285471B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2005 |
| Grant date | Oct 23, 2007 |
| Priority date | — |
| Expiry date | Sep 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3226
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Processes for forming semiconductor structure comprising a transfer layer transferred from a donor substrate are provided in which the resulting structure has improved quality with respect to defects and resulting structures therefrom. For example, a semiconductor on insulator (“SeOI”) structure can be formed using a donor substrate, a support substrate and an insulating layer. The donor substrate may be formed using CZ pulling of semiconductor material at a rate that results in the existence of vacancy clusters. An insulating layer for the SeOI structure can be formed by depositing an oxide layer on the donor or support substrate. An insulating layer can also be formed by thermal oxidizing the support substrate. An SeOI structure can be formed by combining the donor substrate, the support substrate, and the insulating layer there between, and detaching the combination including a thin layer of the donor substrate using a zone of weakness that was formed in the donor substrate. In some embodiments, the donor substrate is initially formed using a technique that results in lower COPs quality or density that if the donor substrate was formed from a Very Slow Pull, and after curing of …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.