Methods for thermally treating a semiconductor layer
US7285495B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2005 |
| Grant date | Oct 23, 2007 |
| Priority date | — |
| Expiry date | Nov 27, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for thermally treating a semiconductor layer is described. An embodiment of the technique includes implanting atomic species into a first surface of a donor wafer to form a zone of weakness at a predetermined depth that defines the thickness of a transfer layer, bonding the first surface of the donor wafer to a host wafer, supplying energy to detach the transfer layer from the donor wafer at the zone of weakness, and conducting a recovery operation on the transfer layer. The recovery operation is conducted after detachment but while the layer remains in contact with the donor wafer. The recovery operation includes heat treating the transfer layer for a predetermined duration at a recovery temperature that is lower than a re-adhesion temperature at which the transfer layer would re-adhere to the donor wafer, to improve the crystalline quality and the surface roughness of the transfer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.