Method of manufacturing group-III nitride crystal
US7288151B2 · kind B2 · utility
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2References
9Claims
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Key dates
| Filing date | Nov 29, 2004 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Nov 25, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/406
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.