Etching liquid for controlling silicon wafer surface shape and method for manufacturing silicon wafer using the same
US7288207B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2006 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Jan 31, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a silicon wafer includes a planarizing process 13 for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process for dipping the silicon wafer into the etching liquid wherein silica powder is dispersed uniformly in an alkali aqueous solution, thereby etching the upperside and lowerside surfaces of the silicon wafer, and a both-side simultaneous polishing process 16 for polishing the upperside and lowerside surfaces of the etched silicon wafer simultaneously or a one-side polishing process for polishing the upperside and lowerside surfaces of the etched silicon wafer one after another, in this order.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.