Patent · US Expired

SOI active layer with different surface orientation

US7288458B2 · kind B2 · utility

12Cited by

4References

21Claims

0Family size

Assignee

Freeescale Semiconductor, Inc. · US

Inventors

Olubunmi O. Adetutu · Austin, US
Robert E. Jones · Austin, US
Ted R. White · Austin, US

Key dates

Filing date	Dec 14, 2005
Grant date	Oct 30, 2007
Priority date	—
Expiry date	Jan 29, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A wafer having an SOI configuration and active regions having different surface orientations for different channel type transistors. In one example, semiconductor structures having a first surface orientation are formed on a donor wafer. Semiconductor structures having a second surface orientation are formed on a second wafer. Receptor openings are formed on the second wafer. The semiconductor structures having the first surface orientation are located in the receptor openings and transferred to the second wafer. The resultant wafer has semiconductor regions having a first surface orientation for a first channel type of transistor and semiconductor regions having a second surface orientation for a second channel type transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.