Methods for the use of alkoxysilanol precursors for vapor deposition of SiO2 films

US7294583B1 · kind B1 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Ron Rulkens · Milpitas, US
• George D. Papasouliotis · Fishkill, US
• Dennis M. Hausmann · Lake Oswego, US
• Raihan M. Tarafdar · San Jose, US
• Bunsen B. Nie · Fremont, US
• Adrianne K. Tipton · Pleasanton, US
• Jeff Tobin · Nashua, US

Key dates

• Filing date: Dec 23, 2004
• Grant date: Nov 13, 2007
• Expiry date: Dec 23, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02271
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more efficiently than previous methods using alkoxysilanes since fewer oxidation reactions are required. In addition, the dielectric can be formed with or without a metal-containing catalyst/nucleation layer, so that metal content in the dielectric film can be avoided, if desired. Seams and voids are therefore avoided in gaps filled more efficiently with higher quality dielectric. In addition, the films as dense as deposited, reducing or eliminating the need for post-deposition processing (e.g., annealing).