Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition
US7297608B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2004 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Mar 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. The method includes the following three principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film; and annealing the dielectric film in a low temperature oxygen-containing high density plasma. The resulting film has improved mechanical properties, including minimized seams, improved WERR, and low intrinsic stress, comparable to a high temperature annealing process (˜800° C.), but without exceeding the thermal budget limitations of advanced devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.