Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes
US7297612B2 · kind B2 · utility
12Cited by
230References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2005 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Nov 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.