Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material
US7300597B2 · kind B2 · utility
8Cited by
7References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 27, 2006 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Sep 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.