Photoacid generating polymer, its preparation method, top anti-reflective coating composition comprising the same, method of forming a pattern in a semiconductor device, and semiconductor device
US7303858B2 · kind B2 · utility
4Cited by
9References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2005 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | Oct 23, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S522/904
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Disclosed herein is a photoacid generating polymer represented by Formula 1 below:wherein R1 is a C1-10 hydrocarbon or a C1-10 hydrocarbon in which the hydrogen atoms are wholly or partly replaced by fluorine atoms; R2 is hydrogen or a methyl group; and a, b, c and d represent the mole fraction of each monomer and are in the range between about 0.05 and about 0.9, such that the sum of a, b, c, and d equals one. Since the photoacid generating polymer of Formula 1 is not water-soluble and acts as a photoacid generator, it can be used to prepare a top anti-reflective coating composition for immersion lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.