LDMOS transistor with improved gate shield
US7307314B2 · kind B2 · utility
10Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2004 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Dec 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A LDMOS transistor having a gate shield provides reduced drain coupling to the gate shield and source by restricting the thickness of the gate shield and by confining a source contact to the source region without overlap of the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.