Differential mechanical stress-producing regions for integrated circuit field effect transistors
US7307320B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 7, 2005 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Nov 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0188
Abstract
Integrated circuit field effect transistors include a substrate, an isolation region in the substrate that defines an active region in the substrate, spaced apart source/drain regions in the active region, a channel region in the active region between the spaced apart source/drain regions and an insulated gate on the channel region. A differential mechanical stress-producing region is configured to produce different mechanical stress in the channel region adjacent the isolation region compared to remote from the isolation region. The differential mechanical stress-producing region may be formed using patterned stress management films, patterned stress-changing implants and/or patterned silicide films, and can reduce undesired comer effects. Related fabrication methods also are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.