Method and apparatus for forming a film on a substrate
US7309662B1 · kind B1 · utility
1Cited by
20References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2000 |
| Grant date | Dec 18, 2007 |
| Priority date | — |
| Expiry date | Jun 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapor form a silicon containing organic compound and an oxidizing agent in the presence of a plasma to deposit a film on the substrate and setting the film such that carbon containing groups are retained therein. In particular embodiments the setting is achieved by exposing the film to H2 plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.