Lanthanide oxide / hafnium oxide dielectric layers
US7312494B2 · kind B2 · utility
579Cited by
150References
28Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 31, 2004 |
| Grant date | Dec 25, 2007 |
| Priority date | — |
| Expiry date | Aug 31, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more monolayers and a lanthanide oxide layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The dielectric can be formed as a nanolaminate of hafnium oxide and a lanthanide oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.