Random access memory including first and second voltage sources
US7313033B2 · kind B2 · utility
2Cited by
5References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2005 |
| Grant date | Dec 25, 2007 |
| Priority date | — |
| Expiry date | Feb 25, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2254
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A random access memory including first memory cells, second memory cells, a first voltage source, and a second voltage source. The first voltage source is configured to control the first memory cells. The second voltage source is configured to control the second memory cells. Also, the first voltage source is configured to be trimmed independently of the second voltage source to provide a first voltage that reduces leakage from the first memory cells and the second voltage source is configured to be trimmed independently of the first voltage source to provide a second voltage that reduces leakage from the second memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.