Methods for reducing wordline sheet resistance
US7314796B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2004 |
| Grant date | Jan 1, 2008 |
| Priority date | — |
| Expiry date | Nov 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to forming memory wordlines having a relatively lower sheet resistance. In one embodiment, a control-gate poly layer including a first and a second poly-Si portion is deposited. a The first poly-Si portion is deposited on a semiconductor substrate using a first precursor gas flow rate. A The second poly-Si portion is deposited on the first poly-Si portion using a second precursor gas flow rate, where the second precursor flow rate higher than the first precursor gas flow rate. A tungsten silicide layer is then deposited. A wordline is formed from a stacked film of the control-gate poly layer and tungsten silicide layer. The control-gate poly layer and tungsten silicide layer are then patterned to form a gate electrode, and a implantation process is made, after or before, forming the tungsten silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.