Forming high-k dielectric layers on smooth substrates
US7323423B2 · kind B2 · utility
31Cited by
8References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 30, 2004 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | Mar 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The surface of the substrate may be saturated with hydroxyl terminations prior to deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.