Semiconductor device and fabrication method
US7326609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2005 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | May 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
Abstract
A method and apparatus for manufacturing a semiconductor device is provides a substrate having a first region and a second region. A sacrificial first gate is formed in the first region. Source/drain are formed in the first region. A second region gate dielectric is formed in the second region. A second region gate is formed on the second region gate dielectric. A second region source/drain is formed in the second region. A sacrificial layer is formed over the sacrificial first gate, the source/drain, the first region, and the second region. The sacrificial first gate is exposed. A gate space is formed by removing the sacrificial first gate. A first region gate dielectric is formed in the gate space. A first region gate is formed on the first region gate dielectric. The sacrificial layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.