Method of manufacturing display device
US7326623B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2005 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | Jul 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined areas of the polycrystalline semiconductor film intermittently with a continuous wave laser beam while a position of the substrate with respect to the continuous wave laser beam is scanned, crystal grains larger than those of the polycrystalline semiconductor film other than the predetermined areas are formed in each of the predetermined areas locally in the polycrystalline semiconductor film, wherein first thin film transistors are formed in the predetermined areas while second thin film transistors are formed in the polycrystalline semiconductor film other than the predetermined areas thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.