Ion beam system and machining method
US7326942B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2005 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | Jul 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.