Ion implanting methods

US7329618B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Randall Culver · Boise, US
• Terrence B. McDaniel · Boise, US
• Hongmei Wang · Boise, US
• James L. Dale · Conway, US
• Richard H. Lane · Boise, US
• Fred Fishburn · Boise, US

Key dates

• Filing date: Jun 28, 2005
• Grant date: Feb 12, 2008
• Expiry date: Feb 23, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/266
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An ion implanting method includes forming a pair of spaced and adjacent features projecting outwardly from a substrate. At least outermost portions of the pair of spaced features are laterally pulled away from one another with a patterned photoresist layer received over the features and which has an opening therein received intermediate the pair of spaced features. While such spaced features are laterally pulled, a species is ion implanted into substrate material which is received lower than the pair of spaced features. After the ion implanting, the patterned photoresist layer is removed from the substrate. Other aspects and implementations are contemplated.