Model and parameter selection for optical metrology
US7330279B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2002 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Aug 5, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. A set of optimization parameters is selected for the profile model using one or more input diffraction signals and one or more parameter selection criteria. The selected profile model and the set of optimization parameters are tested against one or more termination criteria. The process of selecting a profile model, selecting a set of optimization parameters, and testing the selected profile model and set of optimization parameters is performed until the one or more termination criteria are met.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.