Methods of modulating the work functions of film layers
US7332433B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2005 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Sep 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
Abstract
Methods for fabricating two metal gate stacks with varying work functions for complementary metal oxide semiconductor (CMOS) devices are provided A first metal layer may be deposited onto a gate dielectric, followed by the deposition of a second metal layer, where the second metal layer modulated the work function of the first metal layer. The second metal layer and subsequently etch, exposing a portion of the first metal layer. A third metal layer may be deposited on the etched second metal layer and the exposed first metal layer, where the third metal layer may modulate the work function of the exposed first metal layer. Subsequent fabrication techniques may be used to define the gate stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.