FinFET structure with contacts

US7339241B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Marius Orlowski · Meylan, FR
• Tab A. Stephens · Kyle, US

Key dates

• Filing date: Aug 31, 2005
• Grant date: Mar 4, 2008
• Expiry date: Feb 25, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6729

Abstract

A FinFET, which by its nature has both elevated source/drains and an elevated channel that are portions of an elevated semiconductor portion that has parallel fins and one source/drain on one side of the fins and another source/drain on the other side of the fins, has all of the source/drain contacts away from the fins as much as reasonably possible. The gate contacts extend upward from the top surface of the elevated semiconductor portion. The gate also extends upward from the top surface of the elevated semiconductor portion. The contacts are located between the fins where the gate is below the height of the elevated semiconductor portion so the contacts are as far as reasonably possible from the gate, thereby reducing gate to drain capacitance and providing additional assistance to alignment tolerance.