Patent · US Expired

Method for controlling a thickness of a first layer and method for adjusting the thickness of different first layers

US7341950B2 · kind B2 · utility

1Cited by

7References

39Claims

0Family size

Assignees

Infineon Technologies AG · DE
NANYA TECHNOLOGY CORPORATION · TW

Inventors

Yi-Jen Lo · Taipei, TW
Axel Buerke · Dresden, DE
Sven Schmidbauer · Dresden, DE
Chiang-Hung Lin · Taipei, TW

Key dates

Filing date	Dec 7, 2005
Grant date	Mar 11, 2008
Priority date	—
Expiry date	Dec 7, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76867
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for controlling a thickness of a first layer of an electrical contact of a semiconductor device, whereby the semiconductor device comprises a semiconductor layer, a first layer and a second layer, whereby at least a part of the semi-conductor layer is covered with the first layer, whereby at least a part of the first layer is covered with the second layer, whereby the second layer is exposed to a plasma gas, whereby an upper face of the first layer adjacent to the second layer is treated by the plasma gas and an interlayer is generated between the first and the second layer reducing the thickness of the first layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.