Ferromagnetic liner for conductive lines of magnetic memory cells and methods of manufacturing thereof

US7344896B2 · kind B2 · utility

Assignees

• Infineon Technologies AG · DE
• International Business Machines Corporation · US

Inventors

• Rainer Leuschner · Regensburg, DE
• Wolfgang Raberg · Sauerlach, DE
• Stephen L. Brown · Detroit, US
• Frank Findeis · Munich, DE
• Sivanandha K. Kanakasabapathy · Hopewell Junction, US
• Michael Vieth · Bad Vilbel, DE

Key dates

• Filing date: Jul 26, 2004
• Grant date: Mar 18, 2008
• Expiry date: Dec 28, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/00
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of forming ferromagnetic liners on the top surface and sidewalls of conductive lines of magnetic memory devices. The ferromagnetic liners increase the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. In one embodiment, an in-bound pole is formed at the bottom edge of conductive lines, further concentrating the flux.