Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistor
US7344945B1 · kind B1 · utility
19Cited by
14References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2004 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Jun 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.