Method and apparatus for multilayer photoresist dry development
US7344991B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2003 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Aug 14, 2023 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61M2025/028
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.