Corona based charge voltage measurement
US7345306B1 · kind B1 · utility
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Key dates
| Filing date | Jun 2, 2006 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Nov 16, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2648
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.