Patent · US Expired

Memory having storage locations within a common volume of phase change material

US7345899B2 · kind B2 · utility

6Cited by

15References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Nirschl · Putzbrunn, DE
Thomas Happ · Tarrytown, US
Jan Boris Philipp · Peekskill, US

Key dates

Filing date	Apr 7, 2006
Grant date	Mar 18, 2008
Priority date	—
Expiry date	Apr 7, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/884
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory includes a volume of phase change material, a first transistor coupled to the volume of phase change material for accessing a first storage location within the volume of phase change material, and a second transistor coupled to the volume of phase change material for accessing a second storage location within the volume of phase change material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.