Method and system for providing a magnetic memory structure utilizing spin transfer
US7345912B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 1, 2006 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Sep 20, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.