One hundred millimeter single crystal silicon carbide wafer
US7351286B2 · kind B2 · utility
15Cited by
18References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2005 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Feb 15, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing a high quality bulk single crystal of silicon carbide in a seeded growth system is disclosed. The method includes positioning the seed crystal in a crucible while exerting minimal torsional forces on the seed crystal to thereby prevent torsional forces from warping or bowing the seed crystal in a manner that that would otherwise encourage sublimation from the rear of the seed crystal or undesired thermal differences across the seed crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.