Ta based bilayer seed for IrMn CPP spin valve
US7352543B2 · kind B2 · utility
9Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2005 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | May 9, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/39
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.