Yu-Hsia Chen
24Patents
10h-index
13Co-inventors
64Inventor score
Filing activity: May 19, 2004 → Apr 4, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7602033B2 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer | Electricity | 71 | Active |
| US7390529B2 | Free layer for CPP GMR having iron rich NiFe | Emerging Cross-Sectional Technologies | 43 | Expired |
| US6960480B1 | Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head | Electricity | 36 | Expired |
| US7331100B2 | Process of manufacturing a seed/AFM combination for a CPP GMR device | Emerging Cross-Sectional Technologies | 32 | Expired |
| US7333306B2 | Magnetoresistive spin valve sensor with tri-layer free layer | Emerging Cross-Sectional Technologies | 24 | Active |
| US7780820B2 | Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier | Emerging Cross-Sectional Technologies | 19 | Active |
| US7610674B2 | Method to form a current confining path of a CPP GMR device | Emerging Cross-Sectional Technologies | 17 | Active |
| US7672088B2 | Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications | Electricity | 16 | Active |
| US7583481B2 | FCC-like trilayer AP2 structure for CPP GMR EM improvement | Electricity | 14 | Active |
| US8557407B2 | Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier | Emerging Cross-Sectional Technologies | 10 | Active |
| US7238979B2 | Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM | Electricity | 10 | Expired |
| US7352543B2 | Ta based bilayer seed for IrMn CPP spin valve | Physics | 9 | Expired |
| US7646568B2 | Ultra thin seed layer for CPP or TMR structure | Emerging Cross-Sectional Technologies | 9 | Active |
| US8008740B2 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer | Electricity | 9 | Active |
| US8337676B2 | Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier | Emerging Cross-Sectional Technologies | 8 | Active |
| US7355823B2 | Ta based bilayer seed for IrMn CPP spin valve | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7872838B2 | Uniformity in CCP magnetic read head devices | Emerging Cross-Sectional Technologies | 5 | Active |
| US7918014B2 | Method of manufacturing a CPP structure with enhanced GMR ratio | Emerging Cross-Sectional Technologies | 4 | Active |
| US8012316B2 | FCC-like trilayer AP2 structure for CPP GMR EM improvement | Electricity | 3 | Active |
| US7990660B2 | Multiple CCP layers in magnetic read head devices | Emerging Cross-Sectional Technologies | 2 | Active |
| US7288281B2 | CPP spin valve with ultra-thin CoFe(50%) laminations | Physics | 1 | Expired |
| US8484830B2 | Method of manufacturing a CPP structure with enhanced GMR ratio | Emerging Cross-Sectional Technologies | 1 | Active |
| US7978440B2 | Seed/AFM combination for CCP GMR device | Emerging Cross-Sectional Technologies | 1 | Active |
| US8289661B2 | CPP structure with enhanced GMR ratio | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.