Technique for forming a contact insulation layer with enhanced stress transfer efficiency

US7354838B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Thorsten Kammler · Radeberg, DE
• Andy Wei · Queensbury, US
• Markus Lenski · Dresden, DE

Key dates

• Filing date: Nov 29, 2005
• Grant date: Apr 8, 2008
• Expiry date: Jul 22, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212

Abstract

By removing an outer spacer, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal silicide, a high degree of process compatibility with conventional processes is obtained, while at the same time a contact liner layer may be positioned more closely to the channel region, thereby allowing a highly efficient stress transfer mechanism for creating a corresponding strain in the channel region.