Ta based bilayer seed for IrMn CPP spin valve
US7355823B2 · kind B2 · utility
6Cited by
8References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 26, 2005 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | May 9, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49044
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.