Bottom conductor for integrated MRAM

US7358100B2 · kind B2 · utility

Assignee

• MagIC Technologies, Inc. · US

Inventors

• Wei Cao · Milpitas, US
• Chyu-Jiuh Torng · Pleasanton, US
• Cheng T. Horng · San Jose, US
• Ruying Tong · Los Gatos, US
• Chen-Jung Chien · Mountain View, US
• Liubo Hong · San Jose, US

Key dates

• Filing date: Aug 14, 2007
• Grant date: Apr 15, 2008
• Expiry date: Aug 14, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/22

Abstract

A method to fabricate an MTJ device and its connections to a CMOS integrated circuit is described. The device is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum.