Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof
US7361444B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1999 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Apr 2, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/145
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials. These underlayer films include the group consisting of novolac based resists whose processing conditions are controlled, polyarylsulfones such as the BARL material, polyhydroxystyrene based derivatives, an example being a copolymer of polyhydroxystyrene and polyhydroxystyrene reacted with anthracenemethanol that contains a cross-linker, and acid catalyst (thermal acid generator), polyimides, polyethers in particular polyarylene ethers, polyarylenesulfides, polycarbonates such as polyarylenecarbonates, epoxies, epoxyacrylates, polyarylenes such as polyphenylenes, polyarylenevinylenes such as polyphenylenevinylenes, polyvinylcarbazole, cyclicolefins, and polyesters. Such films have index of refraction and extinction coefficient tunable from about 1.4 to about 2.1 and from about 0.1 to abo…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.