Transistors and methods of manufacture thereof
US7361538B2 · kind B2 · utility
66Cited by
32References
9Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 14, 2005 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Aug 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Transistors and methods of manufacture thereof are disclosed. A workpiece is provided, a gate dielectric is formed over the workpiece, and a gate is formed over the gate dielectric by exposing the workpiece to a precursor of hafnium (Hf) and a precursor of silicon (Si). The gate includes and include respectively a layer of a combination of Hf and Si. The layer of the combination of Hf and Si of the gate establishes the threshold voltage Vt of the transistor. The transistor may includes and include respectively a single NMOS transistor or an NMOS transistor of a CMOS device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.